Oxidation of CVD Si/sub 3/N/sub 4/ at 1550/sup 0/ to 1650/sup 0/C

Journal Article · Tue Jul 01 04:00:00 EDT 1980 · J. Am. Ceram. Soc.; (United States)

DOI:https://doi.org/10.1111/j.1151-2916.1980.tb10204.x· OSTI ID:5067288

Hirai, T; Niihara, K; Goto, T

A thermogravimetric study of the oxidation behavior of chemically vapor-deposited amorphous and crystalline Si/sub 3/N/sub 4/ (CVD Si/sub 3/N/sub 4/) was made in dry oxygen (0.1 MPa) at 1550/sup 0/ to 1650/sup 0/C. The specimens were prepared under various deposition conditions using a mixture of SiCl/sub 4/, NH/sub 3/, and H/sub 2/ gases. The crystalline CVD Si/sub 3/N/sub 4/ indicated a parabolic oxidation kinetics over the whole temperature range, whereas the amorphous CVD Si/sub 3/N/sub 4/ changed from a parabolic to a linear law with increased temperature. The oxidation mechanism is discussed in terms of the activation energy for the oxidation and the microstructure of the formed oxide films.

• Research Organization: Tohoku Univ., Sendai, Japan
• OSTI ID: 5067288
• Journal Information: J. Am. Ceram. Soc.; (United States), Journal Name: J. Am. Ceram. Soc.; (United States) Vol. 63:7-8; ISSN JACTA
• Country of Publication: United States
• Language: English

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