Chemical processes in vapor deposition of silicon. I. Deposition from dichlorosilane and etching by hydrochloric acid
Chemical processes occurring in the vapor deposition of Si from SiCl/sub 2/H/sub 2/ and in the etching of Si by HCl were studied by means of a mass spectrometer coupled to the chemical-vapor-deposition reactor. This setup was successfully used for the qualitative and quantitative analysis of the composition of the vapor phase in the Si-Cl-H system. Species found in the vapor phase were H/sub 2/, HCl, SiCl/sub 2/, SiCl/sub 2/H/sub 2/, SiCl/sub 3/H, and SiCl/sub 4/, and their partial pressures were measured as a function of temperature, Cl/H ratio, and of the chemical nature of the initial gaseous mixture entering the reactor. The experimentally determined partial pressures were compared with the equilibrium partial pressures of vapor species, calculated from the newest thermochemical data for the Si-Cl-H system. Based on these results, the nature and the extent of chemical processes in systems studied are discussed. (WDM)
- Research Organization:
- RCA Lab., Princeton, NJ
- OSTI ID:
- 7194342
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 122:10; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
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36 MATERIALS SCIENCE
360104 -- Metals & Alloys-- Physical Properties
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELEMENTS
ETCHING
HYDROCHLORIC ACID
HYDROGEN COMPOUNDS
INORGANIC ACIDS
SEMIMETALS
SILICON
SURFACE COATING
SURFACE FINISHING