Thermodynamic analysis of the W--F--Si--H and W--F--Si--H--Cl systems
- Department of Chemical Engineering, San Jose State University, San Jose, California 95192 (US)
- Genus Incorporated, Mountain View, California 94043 (USA)
Chemical vapor deposition of WSi{sub 2} was studied through thermodynamic equilibrium calculations for the W--F--Si--H and W--F--Si--H--Cl systems. The calculations were made with a computer program that minimizes the Gibbs free energy by Langrangian multiplier techniques. The parameter range for these system analyses were: temperature 473 to 1073 K, pressure from 50 to 500 mTorr, and Si/W ratios of 3 to 1000. 21 gas phase species and eight solid species were included in the calculations for the W--F--Si--H system and 39 gas phase species and 15 solid species were considered for the W--F--Si--H--Cl system. At the equilibrium condition, H{sub 2}, SiF{sub 4}, and SiF{sub 2}H{sub 2} are the most prominent gaseous species for the W--F--Si--H system while WSi{sub 2} and Si are formed in the solid phase. For the W--F--Si--H--Cl system, WSi{sub 2} and Si are formed in the solid phase, while H{sub 2}, SiCl{sub 4}, HCl, SiF{sub 4} and SiHCl{sub 3} are the most prominent gas phase species. The SiCl{sub 2} intermediate plays a key role in the surface activated reaction for this system.
- OSTI ID:
- 7171206
- Journal Information:
- Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA), Journal Name: Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA) Vol. 8:1; ISSN 0734-211X; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CHEMISORPTION
CHLORIDES
CHLORINE COMPOUNDS
COMPUTER CALCULATIONS
DEPOSITION
ELEMENTS
ENERGY
EQUILIBRIUM
FLUORIDES
FLUORINE COMPOUNDS
FREE ENERGY
HALIDES
HALOGEN COMPOUNDS
HYDROCHLORIC ACID
HYDROGEN
HYDROGEN COMPOUNDS
INORGANIC ACIDS
MOS TRANSISTORS
NONMETALS
PHYSICAL PROPERTIES
PRESSURE DEPENDENCE
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR DEVICES
SEPARATION PROCESSES
SILICIDES
SILICON CHLORIDES
SILICON COMPOUNDS
SILICON FLUORIDES
SORPTION
SURFACE COATING
TEMPERATURE DEPENDENCE
THERMAL EQUILIBRIUM
THERMODYNAMIC PROPERTIES
TRANSISTORS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
TUNGSTEN SILICIDES