High-efficiency silicon doping of InP and In[sub 0. 53]Ga[sub 0. 47]As in gas source and metalorganic molecular beam epitaxy using silicon tetrabromide

Journal Article · Mon May 23 04:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.111420· OSTI ID:7283901

Jackson, S L; Fresina, M T; Baker, J E; Stillman, G E ^[1]

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1. Department of Electrical and Computer Engineering, Center for Compound Semiconductor Microelectronics, Coordinated Science Laboratory, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

Efficient vapor source Si doping of InP and In[sub 0.53]Ga[sub 0.47]As have been demonstrated using SiBr[sub 4] as the Si source for both gas source (GSMBE) and metalorganic molecular beam epitaxy (MOMBE). Net electron concentrations ranging from [ital n]=2[times]10[sup 17] to 6.8[times]10[sup 19] cm[sup [minus]3] and from 9[times]10[sup 16] to 3[times]10[sup 19] cm[sup [minus]3] have been obtained for InP and In[sub 0.53]Ga[sub 0.47]As, respectively. Comparison of these data with those for Si[sub 2]H[sub 6] indicate that the Si incorporation efficiency with SiBr[sub 4] is more than 10 000 times greater than with Si[sub 2]H[sub 6] for substrate temperatures in the range of 475[le][ital T][sub [ital s]][le]500 [degree]C. Specular surface morphologies were obtained, even for the most heavily doped samples. While [Si] as high as 1.8[times]10[sup 20] cm[sup [minus]3] was obtained in InP, the net electron concentrations and 300 K Hall mobilities decrease with increasing [Si] for [Si][gt]6.8[times]10[sup 19] cm[sup [minus]3]. Contact resistances as low as [ital R][sub [ital c]]=3[times]10[sup [minus]8] [Omega] cm[sup 2] were obtained using a nonalloyed Ti/Pt/Au contact to InP layers doped to [ital n]=6.3[times]10[sup 19] cm[sup [minus]3]. During GSMBE growth, an increased Si background concentration ([Si][similar to]2[times]10[sup 17] cm[sup [minus]3]) was observed after extended use of the SiBr[sub 4] source for these heavy doping concentrations. This increased background was not observed in MOMBE-grown material. Depth profiles of pulse-doped structures indicate the absence of memory effects for structures grown by MOMBE.

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 7283901
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:21; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
BROMIDES
BROMINE COMPOUNDS
CRYSTAL DOPING
DOPED MATERIALS
ELECTRON DENSITY
ELECTRON MOBILITY
EPITAXY
FLUID INJECTION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAS INJECTION
HALIDES
HALL EFFECT
HALOGEN COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MATERIALS
MOBILITY
MOLECULAR BEAM EPITAXY
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SILICON ADDITIONS
SILICON ALLOYS
SILICON BROMIDES
SILICON COMPOUNDS