Influence of AsH{sub 3} cracking temperature on the H passivation of C acceptors in In{sub 0.53}Ga{sub 0.47}As grown by beam epitaxy techniques

Journal Article · Sun Sep 01 04:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.117628· OSTI ID:383728

Jackson, S L; Baker, J E; Stillman, G E ^[1]

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1. Department of Electrical and Computer Engineering, Center for Compound Semiconductor Microelectronics, Coordinated Science Laboratory, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

The influence of subhydride species generated in a low-pressure Ta-based AsH{sub 3} cracker on the degree of H passivation of C acceptors in heavily doped ({ital p}{ge}3{times}10{sup 19} cm{sup {minus}3}) In{sub 0.53}Ga{sub 0.47}As grown by gas source and metalorganic molecular beam epitaxy has been studied. A strong correlation has been observed between the relative abundance of AsH{sub 3}, AsH, and H in quadrupole mass spectra and the degree of passivation. Enhanced effects were observed at reduced growth temperatures. Design of experiments techniques have been used to study the influence of hydride cracker temperature, substrate temperature, H{sub 2} pumping speed, group III sources, AsH{sub 3} flow rate and the second order interactions on the H passivation of C acceptors. The substrate temperature, hydride cracking temperature, and H{sub 2} pumping speed, were determined to have the dominant effects, while second order interactions were dominated by substrate temperature, H{sub 2} pumping speed, and AsH{sub 3} flow rate interactions with the hydride cracking temperature. Optimized parameters were determined that permit the growth of essentially unpassivated ({le}10{percent}) C-doped In{sub 0.53}Ga{sub 0.47}As with net hole concentrations as high as {ital p}=8{times}10{sup 19} cm{sup {minus}3} by both gas source and metalorganic molecular beam epitaxy techniques. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: University of Illinois
• DOE Contract Number: FG02-91ER45439
• OSTI ID: 383728
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 69; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON ADDITIONS
CRYSTAL DOPING
FILM GROWTH
GALLIUM ARSENIDES
GROWTH
HYDROGEN ADDITIONS
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PASSIVATION
TEMPERATURE DEPENDENCE