Growth and characterization of semi-insulating GaP and In{sub 0.47}Ga{sub 0.53}P

Book · Thu Jun 01 04:00:00 EDT 1995

OSTI ID:55380

He, Y; Ramdani, J; El-Masry, N A; Bedair, S M ^[1]

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1. North Carolina State Univ., Raleigh, NC (United States)

Epitaxial GaP and In{sub 0.47}Ga{sub 0.53}P have been successfully grown at a low temperature (LT) of {approximately}200 C by gas source molecular beam epitaxy (GSMBE). Both of the LT P-based compounds were observed to have excess P, resulting in lattice expansion and image contrast with respect to their bulk materials. The amount of excess P is in the order of 1 at.% in LT GaP and {approximately}0.5 at.% in LT In{sub 0.47}Ga{sub 0.53}P. The two LT compounds all exhibit semi-insulating properties with resistivities of {approximately}10{sup 8} {Omega} cm and 10{sup 6} {Omega} cm for the as-grown LT GaP and LT In{sub 0.47}Ga{sub 0.53}P, respectively. Annealing the LT films at 600--700 C for 1 h improves the resistivity by two to three orders of magnitude, but only induces a slight reduction of the lattice strain. In this paper, the authors report on the growth and characterization of LT GaP and LT In{sub 0.47}Ga{sub 0.53}P. This work is considered the first demonstration of the two semi-insulating compounds grown by GSMBE.

• OSTI ID: 55380
• Report Number(s): CONF-9310328--; ISBN 1-56676-232-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRON DIFFRACTION
EXPERIMENTAL DATA
GALLIUM PHOSPHIDES
HALL EFFECT
INDIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
POLYCRYSTALS
PRECIPITATION
TRANSISTORS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION