High resistivity LT-In{sub 0.47}Ga{sub 0.53}P grown by gas source molecular beam epitaxy

Journal Article · Wed Dec 01 04:00:00 EST 1993 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/BF02650003· OSTI ID:535227

He, Y; El-Masry, N A ^[1]; Look, D C ^[2]

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1. North Carolina State Univ., Raleigh, NC (United States)
2. Wright State Univ., Dayton, OH (United States); and others

Low-temperature (LT) growth of In{sub 0.47}Ga{sub 0.53}P was carried out in the temperature range from 200 to 260{degrees}C by gas source molecular beam epitaxy using solid Ga and In and precracked PH{sub 3}. The Hall measurements of the as-grown film showed a resistivity of {approximately}10{sup 6} {Omega}-cm at room temperature whereas the annealed film (at 600{degrees}C for 1 h) had at least three orders of magnitude, higher resistivity. The Hall measurements, also, indicated activation energies of {approximately}0.5 and 0.8 eV for the as-grown and annealed samples, respectively. Double-crystal x-ray diffraction showed that the LT-InGaP films had {approximately}47% In composition. The angular separation, {Delta}{theta}, between the GaAs substrate and the as-grown LT-InGaP film on (004) reflection was increased by 20 arc-s after annealing. In order to better understand the annealing effect, a LT-InGaP film was grown on an InGaP film grown at 480{degrees}C. While annealing did not have any effect on the HT-InGaP peak position, the LT-InGaP peak was shifted toward the HT-InGaP peak, indicating a decrease in the LT-InGaP lattice parameter. Cross-sectional transmission electron microscopy indicates the presence of phase separation in LT-InGaP films, manifested in the form of a {open_quote}precipitate-like{close_quotes} microstructure. The analytical scanning transmission electron microscopy analysis of the LT-InGaP film revealed a group-V nonstoichiometric deviation of {approximately}0.5 at% P. To our knowledge, this is the first report about the growth and characterization of LT-InGaP films. 12 refs., 5 figs.

• Sponsoring Organization: USDOE
• OSTI ID: 535227
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 12 Vol. 22; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ELECTRIC CONDUCTIVITY
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
REFLECTION
TRANSMISSION ELECTRON MICROSCOPY