In{sub x}Ga{sub 1-x}As (x = 0.25-0.35) grown at low temperature

Journal Article · Wed Dec 01 04:00:00 EST 1993 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/BF02650001· OSTI ID:535225

Ballingall, J M; Ho, P; Lester, L ^[1]

---

1. Martin Marietta Electronics Lab., Syracuse, NY (United States); and others

In{sub x}Ga{sub 1-x}As (x = 0.25-0.35) grown at low temperature on GaAs by molecular beam epitaxy is characterized by Hall effect, transmission electron microscopy, and ultrafast optical testing. As with low temperature (LT) GaAs, the resistivity is generally higher after a brief anneal at 600{degrees}C. High-resolution transmission electron microscopy shows all the as-grown epilayers to be heavily dislocated due to the large lattice mismatch (2-3%). When the layers are annealed, in addition to the dislocations, precipitates are also generally observed. As with LT-GaAs, the lifetime shortens as growth temperature is reduced through the range 300- 120{degrees}C; also, the lifetime in LT-In{sub x}Ga{sub 1- x}As is generally shorter in as-grown samples relative to annealed samples. Metal-semiconductor-metal photodetectors fabricated on the material exhibit response times of 1-2 picoseconds, comparable to results reported on GaAs grown at low temperature, and the fastest ever reported in the wavelength range of 1.0-1.3 {mu}m. 8 refs., 4 figs., 2 tabs.

• Sponsoring Organization: USDOE
• OSTI ID: 535225
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 12 Vol. 22; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISLOCATIONS
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
HALL EFFECT
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTODETECTORS