High-speed photodetector applications of GaAs and In{sub x}Ga{sub 1-x}As/GaAs grown by low-temperature molecular beam epitaxy

Journal Article · Wed Dec 01 04:00:00 EST 1993 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/BF02649997· OSTI ID:535222

Gupta, S; Whitaker, J F; Williamson, S L ^[1]

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1. Univ. of Michigan, Ann Arbor, MI (United States); and others

GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures ({approximately}200{degrees}C) exhibits the desired properties of a high-speed photoconductor: high resistivity, high mobility, high dielectric-breakdown strength, and subpicosecond carrier lifetime. The unique material properties are related to the excess arsenic content in the MBE grown epilayers. Due to the combination of the above properties, dramatically improved performance has been observed in photoconductive detectors and correlators using submicron spaced electrodes. In addition to GaAs, low-temperature growth of In{sub x}Ga{sub 1-x}As alloys also leads to the incorporation of excess arsenic in the layers, and therefore this material system exhibits many beneficial photoconductor properties as well. In particular, the lattice-mismatched growth of LT-In{sub x}Ga{sub 1-x}As on GaAs appears to be the most suited for high-speed detector applications in the near-infrared wavelength range used in optical communications. The material issues and the photodetector characteristics required to optimize their performance are discussed. 20 refs., 7 figs., 1 tab.

• Sponsoring Organization: USDOE
• OSTI ID: 535222
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 12 Vol. 22; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER LIFETIME
ELECTRICAL PROPERTIES
ELECTRODES
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHOTODETECTORS