Graded Al sub x Ga sub 1-x as photoconductive devices for high efficiency picosecond optoelectronic switching

Conference · Mon Oct 01 04:00:00 EDT 1990

OSTI ID:6079389

Morse, J D; Mariella, R P ^[1]; Dutton, R W ^[2]

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1. Lawrence Livermore National Lab., CA (USA)
2. Stanford Univ., CA (USA). Center for Integrated Systems

Picosecond photoconductivity has been achieved for a variety of semiconductor materials by techniques which have now become almost standard. Enhanced scattering by the excessive amount of deep level defects which provide for picosecond recombination lifetimes significantly reduce the mobility, degrading the responsivity of the photoconductor. This paper will present a concept where improved responsivity is achievable by utilizing a graded bandgap Al{sub x}Ga{sub 1-x}As active detecting layer grown on a high defect density GaAs layer by molecular beam epitaxy (MBE). 7 refs., 6 figs.

• Research Organization: Lawrence Livermore National Lab., CA (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 6079389
• Report Number(s): UCRL-JC-103527; CONF-9011125--6; ON: DE91007143
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ENERGY GAP
EPITAXY
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MODIFICATIONS
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTIVITY
PHOTOCONDUCTORS
PHOTODETECTORS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR SWITCHES
SWITCHES
SWITCHING DIODES