Picosecond photoconductivity using a graded bandgap Al sub x Ga sub 1-x As active detecting layer

Conference · Wed Nov 01 04:00:00 EST 1989

DOI:https://doi.org/10.1109/IEDM.1989.74156· OSTI ID:5356238

Morse, J. D.; Mariella, R. P.; Dutton, R. W. ^[1]

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1. Lawrence Livermore National Lab., CA (USA)

This paper presents a concept where improved responsivity for picosecond photoconductors is achieved by utilizing a graded bandgap Al{sub x}Ga{sub 1-x}As active detecting layer grown on a high defect density. Low temperature GaAs layer by MBE. By taking advantage of the superior transport properties of the graded Al{sub x}Ga{sub 1-x}As layer, order of magnitude improvement in responsivity has been demonstrated, along with 2 to 6 times improvement in peak photo-current response. 8 refs., 6 figs.

• Research Organization: Lawrence Livermore National Lab., CA (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 5356238
• Report Number(s): UCRL-101579; CONF-891205--2; ON: DE90003452
• Country of Publication: United States
• Language: English

Related Subjects

440600* -- Optical Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DETECTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FIBER OPTICS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRADED BAND GAPS
OPTICAL PROPERTIES
PHOTOCONDUCTIVITY
PHOTODIODES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES