Photonic applications of thin film GaAs grown on silicon and insulating substrates by Molecular Beam Epitaxy
Conference
·
OSTI ID:6932390
Thin film GaAs layers grown by Molecular Beam Epitaxy (MBE) on silicon, semi-insulating GaAs, and insulating substrates have been investigated for application to optoelectronic circuit technology. Photoconductivity measurements were conducted to characterize the electronic transport properties of the epitaxial layers in terms of carrier recombination lifetime and effective drift mobility. By varying the epitaxial growth parameters, it is possible to obtain various levels of material quality which are suitable for various components of optoelectronic integrated circuits. Results from photodetectors fabricated from GaAs grown on various layers will be presented. The fabrication of ridge waveguides from GaAs grown on silicon dioxide will also be described. Finally, a procedure for growing high quality GaAs for active devices in situ with layers for picosecond photoconductors will be discussed. 5 refs., 6 figs.
- Research Organization:
- Lawrence Livermore National Lab., CA (USA)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 6932390
- Report Number(s):
- UCRL-98370; CONF-8809123-1; ON: DE88016975
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603* -- Materials-- Properties
ALKALI METALS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CORUNDUM
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
EQUIPMENT
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
LITHIUM
METALS
MINERALS
MOLECULAR BEAM EPITAXY
NIOBATES
NIOBIUM COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOCONDUCTIVITY
PHOTODETECTORS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
SAPPHIRE
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SUBSTRATES
SURFACES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
WAVEGUIDES
360601 -- Other Materials-- Preparation & Manufacture
360603* -- Materials-- Properties
ALKALI METALS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CORUNDUM
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
EQUIPMENT
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
LITHIUM
METALS
MINERALS
MOLECULAR BEAM EPITAXY
NIOBATES
NIOBIUM COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOCONDUCTIVITY
PHOTODETECTORS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
SAPPHIRE
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SUBSTRATES
SURFACES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
WAVEGUIDES