Selective-area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy

Journal Article · Mon Jan 13 04:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96977· OSTI ID:6266049

Hong, J M; Wang, S; Sands, T; Washburn, J; Flood, J D; Merz, J L; Low, T

Optical-quality GaAs films were successfully grown by molecular beam epitaxy (MBE) through SiO/sub 2/ insulator windows on GaAs (100) substrates, thus making this selective-area epitaxy applicable to the fabrication of GaAs optoelectronic integrated circuits. The photoluminescence spectra at 2.2 K consist of several exciton peaks near 820 nm and broader acceptor-related peaks centered at approximately 830 nm. The spectra are comparable to those observed in high quality planar MBE GaAs grown in other laboratories. The luminescence intensity from the epitaxial layer above the windows is shown by cathodoluminescence to be much higher than that from the polycrystalline GaAs deposited on top of SiO/sub 2/. From transmission electron microscopy and x-ray diffractometry it is found that the GaAs grains on the SiO/sub 2/ grow with their (111) planes preferentially parallel to the SiO/sub 2/ surface.

• Research Organization: Electronic Research Laboratory, Department of Electrical Engineering and Computer Science, University of California, Berkeley, California 94720
• OSTI ID: 6266049
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
COATINGS
ELECTRONIC CIRCUITS
EPITAXY
EXCITONS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTEGRATED CIRCUITS
LUMINESCENCE
MICROELECTRONIC CIRCUITS
MINERALS
MOLECULAR BEAM EPITAXY
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
QUASI PARTICLES
SILICA
SILICON COMPOUNDS
SILICON OXIDES