Transient photoconductivity of low temperature GaAs grown by molecular beam epitaxy terahertz radar applications

Conference · Tue Jan 01 04:00:00 EST 1991

OSTI ID:5574635

Morse, J D; Mariella, Jr, R P; McConaghy, C F

Optoelectronic sampling techniques have been utilized to characterize transient photoconductivity in low temperature (LT) GaAs grown by molecular beam epitaxy (MBE). Metal-semiconductor-metal (MSM) photoconductive devices have been fabricated on LT-GaAs layers grown at a calibrated'' substrate temperature of 190{degrees}C. Results from on-chip photoconductive sampling measurements demonstrate the ability to generate, propagate, and detect photocurrent pulses of {approximately}4ps duration, which is limited by the optoelectronic measurement system. A carrier mobility of 120 cm{sup 2}/V-s has been estimated from these results, which is a factor of 5--10 times larger than alternative materials used for picosecond photoconductivity. This translates to improved sensitivity for emission and detection of terahertz pulses of electromagnetic (EM) radiation. 10 refs.

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 5574635
• Report Number(s): UCRL-JC-108738; CONF-911267--3; ON: DE92011848
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
DETECTION
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EPITAXY
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MEASURING INSTRUMENTS
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTIVITY
PHOTOCONDUCTORS
PHYSICAL PROPERTIES
PNICTIDES
PULSES
RADAR
RADIATIONS
RANGE FINDERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SWITCHES