Transient photoconductivity of low temperature GaAs grown by molecular beam epitaxy terahertz radar applications
Optoelectronic sampling techniques have been utilized to characterize transient photoconductivity in low temperature (LT) GaAs grown by molecular beam epitaxy (MBE). Metal-semiconductor-metal (MSM) photoconductive devices have been fabricated on LT-GaAs layers grown at a calibrated'' substrate temperature of 190{degrees}C. Results from on-chip photoconductive sampling measurements demonstrate the ability to generate, propagate, and detect photocurrent pulses of {approximately}4ps duration, which is limited by the optoelectronic measurement system. A carrier mobility of 120 cm{sup 2}/V-s has been estimated from these results, which is a factor of 5--10 times larger than alternative materials used for picosecond photoconductivity. This translates to improved sensitivity for emission and detection of terahertz pulses of electromagnetic (EM) radiation. 10 refs.
- Research Organization:
- Lawrence Livermore National Lab., CA (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 5574635
- Report Number(s):
- UCRL-JC-108738; CONF-911267-3; ON: DE92011848
- Resource Relation:
- Conference: DARPA/Rome laboratory symposium on photonics systems for antenna applications, Monterey, CA (United States), 10-12 Dec 1991
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
ELECTROMAGNETIC RADIATION
DETECTION
GALLIUM ARSENIDES
PHOTOCONDUCTIVITY
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTORS
PULSES
RADAR
SEMICONDUCTOR SWITCHES
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EPITAXY
EQUIPMENT
GALLIUM COMPOUNDS
MEASURING INSTRUMENTS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
RANGE FINDERS
SEMICONDUCTOR DEVICES
SWITCHES
360606* - Other Materials- Physical Properties- (1992-)
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)