Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

Journal Article · Sat Apr 15 00:00:00 EDT 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617040054· OSTI ID:22649586

Galiev, G. B.; Buriakov, A. M.; Bilyk, V. R.; Mishina, E. D. ^[1]; Klimov, E. A. ^[2]; Vasil’evskii, I. S. ^[3]; Maltsev, P. P. ^[2]

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1. Moscow Technological University “MIREA” (Russian Federation)
2. Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)
3. National Research Nuclear University “MEPhI” (Russian Federation)

The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.

• OSTI ID: 22649586
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 51; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTENNAS
CRYSTAL STRUCTURE
EMISSION SPECTROSCOPY
ENERGY EFFICIENCY
GALLIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
PHOTOCONDUCTIVITY
RADIATION DETECTORS
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
THIN FILMS