Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates
- Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)
- Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” (Russian Federation)
- National Research Centre “Kurchatov Institute” (Russian Federation)
The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers of arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.
- OSTI ID:
- 22645260
- Journal Information:
- Crystallography Reports, Journal Name: Crystallography Reports Journal Issue: 1 Vol. 62; ISSN 1063-7745; ISSN CYSTE3
- Country of Publication:
- United States
- Language:
- English
Similar Records
Epitaxial low-temperature growth of In{sub 0.5}Ga{sub 0.5}As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates