Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates

Journal Article · Sun Feb 14 23:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616020081· OSTI ID:22645617

Klimov, E. A. ^[1]; Grekhov, M. M. ^[2]; Pushkarev, S. S.; Lavrukhin, D. V.; Maltsev, P. P. ^[1]

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1. Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)
2. National Research Nuclear University “MEPhI” (Russian Federation)

Undoped, uniformly Si-doped, and δ-Si-doped GaAs layers grown by molecular-beam epitaxy on (100)- and (111)A-oriented GaAs substrates at a temperature of 230°C are studied. The As{sub 4} pressure is varied. The surface roughness of the sample is established by atomic-force microscopy; the crystal quality, by X-ray diffraction measurements; and the energy levels of different defects, by photoluminescence spectroscopy at a temperature of 79 K. It is shown that the crystal structure is more imperfect in the case of GaAs(111)A substrates. The effect of the As{sub 4} flux during growth on the structure of low-temperature GaAs grown on different types of substrates is shown as well.

• OSTI ID: 22645617
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 50; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CRYSTAL STRUCTURE
CRYSTALS
DOPED MATERIALS
EMISSION SPECTROSCOPY
ENERGY LEVELS
GALLIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
PHOTOLUMINESCENCE
ROUGHNESS
SUBSTRATES
TEMPERATURE RANGE 0065-0273 K
X-RAY DIFFRACTION