Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

Journal Article · Sat Dec 15 00:00:00 EST 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4770267· OSTI ID:22089653

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel ^[1]; Que, Christopher T. ^[2]; Yamamoto, Kohji; Tani, Masahiko ^[3]

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1. National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines)
2. Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines)
3. Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

• OSTI ID: 22089653
• Journal Information: Journal of Applied Physics, Vol. 112, Issue 12; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMPLITUDES
CRYSTAL DEFECTS
ELECTRIC FIELDS
ELECTROMAGNETIC RADIATION
FERMI LEVEL
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
MOLECULAR BEAM EPITAXY
PIEZOELECTRICITY
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SPECTRA
STRAINS
SUBSTRATES
THIN FILMS