Photoelectronic properties of low temperature GaAs grown on GaAs and silicon substrates by molecular epitaxy

Conference · Tue Apr 25 04:00:00 EDT 1989

OSTI ID:6263425

Mariella, R. P.; Morse, J. D.; Aines, R.; Hunt, C. E.

The characteristics of GaAs layers grown by MBE at growth temperatures from 200/degree/C to 400/degree/C have been evaluated by photoconductivity experiments in order to understand the photoelectronic properties of this material. Low temperature (LT) growth of GaAs on both silicon and GaAs substrates has been investigated in an attempt to better understand the nature defects which are created in epitaxial layers grown under these conditions. Results from experiments on both annealed and unannealed LT samples indicate that the electronic transport properties of the epilayers can be controlled by selecting the appropriate growth conditions. 7 refs., 4 figs., 1 tab.

• Research Organization: Lawrence Livermore National Lab., CA (USA)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 6263425
• Report Number(s): UCRL-99832; CONF-890426-17; ON: DE89013148
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PNICTIDES
POINT DEFECTS
SEMIMETALS
SILICON
SUBSTRATES