Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures

Journal Article · Mon May 08 04:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101229· OSTI ID:6086158

Kaminska, M; Liliental-Weber, Z; Weber, E R; George, T; Kortright, J B; Smith, F W; Tsaur, B; Calawa, A R

GaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 /sup 0/C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high degree of crystalline perfection of these layers. For a layer grown at 200 /sup 0/C and unannealed, x-ray diffraction revealed a 0.1% increase in the lattice parameter in comparison with bulk GaAs. For the same layer, EPR detected arsenic antisite defects with a concentration as high as 5 x 10/sup 18/ cm/sup -3/. This is the first observation of antisite defects in MBE-grown GaAs. These results are related to off-stoichiometric, strongly As-rich growth, possible only at such low temperatures. These findings are of relevance to the specific electrical properties of low-temperature MBE-grown GaAs layers.

• Research Organization: Center for Advanced Materials, Lawrence Berkeley Laboratory, Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720
• OSTI ID: 6086158
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:19; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DIFFRACTION
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELECTRON SPIN RESONANCE
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
INFORMATION
MAGNETIC RESONANCE
MEDIUM TEMPERATURE
MICROSCOPY
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
PHYSICAL PROPERTIES
PNICTIDES
RESONANCE
SCATTERING
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION