Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniques

Journal Article · Thu Oct 01 04:00:00 EDT 1992 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.351538· OSTI ID:7018088

Yu, K M; Kaminska, M; Liliental-Weber, Z ^[1]

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1. Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

The stoichiometry, crystallinity, defect concentration, and the excess As lattice location in GaAs layers grown by molecular beam epitaxy at low growth temperatures ({le}300 {degree}C) were studied using ion beam techniques. The excess As concentration in the layers was measured by particle induced x-ray emission and was found to increase as the growth temperature was lowered. Excess As concentrations up to 1.5 at. % were measured in layers grown at 190 {degree}C. After annealing at temperatures higher than 400 {degree}C under As overpressure, the excess As atoms coalesce to form As precipitates as revealed by transmission electron microscopy. Ion channeling on the unannealed layers grown at 200 {degree}C revealed that they have good crystalline quality with a large fraction of the excess As atoms sitting at interstitial sites close to the normal As sites in the lattice. The rest of the excess As atoms are believed to be in an As{sub Ga} antisite position.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7018088
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 72:7; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION CHANNELING
MICROSCOPY
MOLECULAR BEAM EPITAXY
PNICTIDES
PRECIPITATION
SEPARATION PROCESSES
STOICHIOMETRY
TRANSMISSION ELECTRON MICROSCOPY