Investigation on the lattice site location of the excess arsenic atoms in GaAs layers grown by low temperature molecular beam epitaxy
Conference
·
OSTI ID:10124878
We have measured the excess As atoms present in gaze layers grown by molecular beam epitaxy at low substrate temperatures using particle induced x-ray emission technique. The amount of excess As atoms in layers grown by MBE at 200{degrees}C were found to be {approximately} 4 {times} 10{sup 20} cm{sup {minus}2}. Subsequent annealing of the layers under As overpressure at 600{degrees}C did not result in any substantial As loss. However, transmission electron microscopy revealed that As precipitates (2-5nm in diameter) were present in the annealed layers. The lattice location of the excess As atoms in the as grown layers was investigated by ion channeling methods. Angular scans were performed in the <110> axis of the crystal. Our results strongly suggest that a large fraction of these excess As atoms are located in an interstitial position close to an As row. These As ``intersitials`` are located at a site slightly displaced from the tetrahedral site in a diamond cubic lattice. No interstitial As signal is observed in the annealed layers.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 10124878
- Report Number(s):
- LBL--30990; CONF-911202--60; ON: DE92008253
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation on the lattice site location of the excess arsenic atoms in GaAs layers grown by low temperature molecular beam epitaxy
Lattice site locations of excess arsenic atoms in gallium arsenide grown by low-temperature molecular beam epitaxy
Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniques
Conference
·
Thu Oct 31 23:00:00 EST 1991
·
OSTI ID:5928663
Lattice site locations of excess arsenic atoms in gallium arsenide grown by low-temperature molecular beam epitaxy
Journal Article
·
Sun Dec 15 23:00:00 EST 1991
· Applied Physics Letters; (United States)
·
OSTI ID:5993202
Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniques
Journal Article
·
Thu Oct 01 00:00:00 EDT 1992
· Journal of Applied Physics; (United States)
·
OSTI ID:7018088