Characterization of GaAs/Si/GaAs heterointerfaces
Conference
·
OSTI ID:5778461
Transmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 /angstrom/ Si epilayer grown on GaAs, and GaAs grown at low temperature (300/degree/C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity. 8 refs., 9 figs.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5778461
- Report Number(s):
- LBL-27498; CONF-890426-25; ON: DE89016302
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:6058359
Related Subjects
14 SOLAR ENERGY
140000 -- Solar Energy
36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
DEFECTS
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INTERFACES
MATERIALS
MICROSCOPY
PHOTODETECTORS
PNICTIDES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
140000 -- Solar Energy
36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
DEFECTS
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INTERFACES
MATERIALS
MICROSCOPY
PHOTODETECTORS
PNICTIDES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY