TEM investigation of polar-on-nonpolar epitaxy: GaAs-AlGaAs on (100) Ge

Conference · Thu Nov 01 04:00:00 EST 1984

OSTI ID:6058359

Mazur, J H; Washburn, J; Henderson, T; Klem, J; Masselink, W T; Fischer, R; Morkoc, H

Morphologically excellent GaAs and AlGaAs epitaxial layers have been grown on (100) Ge substrates by molecular-beam epitaxy (MBE). Transmission electron-microscopy (TEM) studies of the thin-film cross sections revealed that defects, most probably antiphase domains, were contained within a 20 to 30 nm thick initial layer near the GaAs/Ge interface, formed with a 0.1-..mu..m/h growth rate at 500/sup 0/C. A reduction of defects occurred in the remaining 0.1-..mu..m thick layer, for which the growth rate and temperature had been increased to 1 ..mu..m/h and 580/sup 0/C, respectively. The interface between this GaAs layer and a subsequently grown 35-nm thick AlAs film was found to undulate with a period of 150 to 200 nm and an amplitude of 5 to 10 nm. Such large undulations were not observed in AlGaAs-GaAs superlattices grown after an additional deposition of 2-..mu..m GaAs. High-resolutin electron-microscopy observations suggest that transitions between different layers are abrupt on the atomic scale. In addition, modulation-doped field-effect transistors fabricated on these layers had similar characteristics to those obtained with MBE layers grown on GaAs substrates. These results demonstrate that the (100) Ge surface is suitable for MBE polar-on-nonpolar semiconductor growth and that the integration of III-V films with silicon electronic devices via epitaxial Ge on Si is feasible, provided that epitaxial Ge of sufficient quality grown on Si is available.

• Research Organization: Lawrence Berkeley Lab., CA (USA); Illinois Univ., Urbana (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6058359
• Report Number(s): LBL-18921; CONF-841157-83; ON: DE85007613
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440300 -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
METALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
PNICTIDES
TRANSMISSION ELECTRON MICROSCOPY