Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
Using molecular beam epitaxy, we have successfully grown device quality GaAs/AlGaAs on (100)-oriented Ge and Si substrates. Modulation doped field effect transistors have been fabricated from these layers which exhibit room-temperature transconductances as high as 160 and 170 mS/mm for layers on Ge and Si, respectively, and showed no looping in either case. At 77 K, these values rose to 345 and 275 mS/mm for Ge and Si, respectively. Analysis by transmission electron microscopy of layers grown on Ge showed that the antiphase disorder was contained within the 250-A-thick initial layer which was grown at a 0.1-..mu../h growth rate at a substrate temperature of 500 /sup 0/C. For both the layers grown on Si and Ge specular surface morphologies were obtained. The photoluminescence of GaAs/AlGaAs quantum wells grown on Si and Ge was similar in intensity to the same quantum well structures grown on GaAs. In quantum wells grown on Ge, the luminescence was dominated by a donor-acceptor recombination at 1.479 eV, which appears to be Ge/sup 0//sub Ga/ -Ge/sup 0//sub As/. These results show that high-quality GaAs/AlGaAs is obtainable on nonpolar substrates, which has important implications for the monolithic integration of III-V's with Si.
- Research Organization:
- University of Illinois, 1101 W. Springfield, Urbana, Illinois 61801
- OSTI ID:
- 5564529
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:1; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
CRYSTAL GROWTH
DIMENSIONS
ELEMENTS
EPITAXY
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
HIGH TEMPERATURE
LOW TEMPERATURE
LUMINESCENCE
MEDIUM TEMPERATURE
METALS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
THICKNESS
TRANSISTORS
VAPOR DEPOSITED COATINGS