Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
- Russian Academy of Sciences, Institute for Physics of Microstuctures (Russian Federation)
- Lobachevsky State University of Nizhny Novgorod (Russian Federation)
- OJSC RPE “Salut” (Russian Federation)
InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with a Ge buffer layer. The diodes generate stimulated emission in the pulsed mode at room temperature in the spectral range from 1.09 to 1.11 μm.
- OSTI ID:
- 22756252
- Journal Information:
- Semiconductors, Vol. 51, Issue 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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