On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

Journal Article · Mon May 15 00:00:00 EDT 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617050037· OSTI ID:22756532

Aleshkin, V. Ya. ^[1]; Baidus, N. V. ^[2]; Krasilnik, Z. F.; Nekorkin, S. M.; Novikov, A. V. ^[1]; Rykov, A. V. ^[2]; Yurasov, D. V.; Yablonskiy, A. N. ^[1]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Lobachevsky State University of Nizhny Novgorod, Physical-Technical Research Institute (Russian Federation)

GaAs/AlGaAs laser structures with InGaAs quantum wells are grown by metal-organic chemical vapor deposition (MOCVD) on exact Si(001) substrates and substrates inclined by 4° to the [011] axis with a relaxed Ge buffer layer, emitting in the transparency region of bulk silicon (the wavelength is longer than 1100 nm at room temperature). The threshold power densities of stimulated emission, observed for the structures grown on exact and inclined substrates are 45 and 37 kW/cm{sup 2}, respectively.

• OSTI ID: 22756532
• Journal Information: Semiconductors, Vol. 51, Issue 5; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
GALLIUM ARSENIDES
GERMANIUM
INDIUM ARSENIDES
LASERS
ORGANOMETALLIC COMPOUNDS
POWER DENSITY
QUANTUM WELLS
STIMULATED EMISSION
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K