Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

Journal Article · Tue Nov 15 00:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616110269· OSTI ID:22649675

Morozov, S. V.; Gaponova, D. M.; Aleshkin, V. Ya. ^[1]; Shengurov, V. G.; Zvonkov, B. N.; Vikhrova, O. V.; Baidus’, N. V. ^[2]; Krasil’nik, Z. F. ^[1]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Lobachevsky State University of Nizhny Novgorod (Russian Federation)

We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.

• OSTI ID: 22649675
• Journal Information: Semiconductors, Vol. 50, Issue 11; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
LAYERS
OPACITY
OPTICAL PUMPING
QUANTUM WELLS
SILICON
STIMULATED EMISSION
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K