Realization of high-quality HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As by in-situ atomic-layer-deposition

Journal Article · Mon Apr 23 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4706261· OSTI ID:22025529

Lin, T D; Hong, M ^[1]; Chang, Y H ^[2]; Lin, C A; Huang, M L; Lee, W C ^[3]; Kwo, J ^[3]

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1. Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
3. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

High {kappa} dielectric of HfAlO/HfO{sub 2} was an in-situ atomic-layer-deposited directly on molecular beam epitaxy grown In{sub 0.53}Ga{sub 0.47}As surface without using pre-treatments or interfacial passivation layers, where HfAlO (HfO{sub 2}:Al{sub 2}O{sub 3} {approx} 4:1) with high re-crystallization temperature was employed as the top oxide layer. The HfAlO ({approx}4.5 nm)/HfO{sub 2} (0.8 nm)/In{sub 0.53}Ga{sub 0.47}As metal oxide semiconductor capacitors have exhibited an oxide/In{sub 0.53}Ga{sub 0.47}As interface free of arsenic-related defective bonding, thermodynamic stability at 800 deg. C, and low leakage current densities of <10{sup -7} A/cm{sup 2} at {+-}1 MV/cm. The interfacial trap density (D{sub it}) spectra in absence of mid-gap peaks were obtained by temperature-dependent capacitance and conductance with D{sub it}'s of 2-3 x 10{sup 12} eV{sup -1} cm{sup -2} below and 6-12 x 10{sup 11} eV{sup -1} cm{sup -2} above the mid-gap of In{sub 0.53}Ga{sub 0.47}As, respectively. An equivalent oxide thickness of less than 1 nm has been achieved by reducing the HfAlO thickness to {approx}2.7 nm with the same initial HfO{sub 2} thickness of {approx}0.8 nm.

• OSTI ID: 22025529
• Journal Information: Applied Physics Letters, Vol. 100, Issue 17; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
CAPACITANCE
CURRENT DENSITY
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION
GALLIUM ARSENIDES
HAFNIUM OXIDES
INDIUM ARSENIDES
INTERFACES
LAYERS
LEAKAGE CURRENT
MOLECULAR BEAM EPITAXY
RECRYSTALLIZATION
SEMICONDUCTOR MATERIALS
SILICON OXIDES
TEMPERATURE DEPENDENCE
THICKNESS
THIN FILMS