Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30012 (China)
- Department of Physics, National Tsing Hua University, Hsinchu, Taiwan 30012 (China)
A capacitive effective thickness (CET) value of 1.0 nm has been achieved in atomic layer deposited (ALD) high {kappa} dielectrics HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As/InP. The key is a short air exposure under 10 min between removal of the freshly grown semiconductor epilayers and loading to the ALD reactor. This has led to minimal formation of the interfacial layer thickness, as confirmed using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. The measured electrical characteristics of metal-oxide-semiconductor diodes of Au/Ti/HfO{sub 2}(4.5 nm)/In{sub 0.53}Ga{sub 0.47}As showed a low leakage current density of 3.8x10{sup -4} A/cm{sup 2} at V{sub FB}+1 V, which is about eight orders of magnitudes lower than that of SiO{sub 2} with the same CET. The capacitance-voltage curves show an overall {kappa} value of 17-18, a nearly zero flatband shift, and an interfacial density of states D{sub it} of 2x10{sup 12} cm{sup -2} eV{sup -1}.
- OSTI ID:
- 21120865
- Journal Information:
- Applied Physics Letters, Vol. 92, Issue 25; Other Information: DOI: 10.1063/1.2952826; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CAPACITANCE
CRYSTAL GROWTH
DEPOSITION
DIELECTRIC MATERIALS
EPITAXY
GALLIUM ARSENIDES
HAFNIUM OXIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LEAKAGE CURRENT
NANOSTRUCTURES
PERMITTIVITY
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SURFACE TREATMENTS
THICKNESS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY