Electrical Properties of Er-doped In0.53Ga0.47As
- Univ. of California, Santa Barbara, CA (United States)
The electrical properties of In0.53Ga0.47As As thin films Er-doped to concentrations of 1.5×1017 –7.2×1020 cm-3 grown by molecular beam epitaxy at 490 °C on (001) InP substrates were studied. Electrical conductivity, carrier density, and carrier mobility as a function of Er doping were measured by Hall effect at temperatures of 20–750 K. Additionally, high-angle annular dark-field scanning transmission electron microscopy and infrared absorption spectroscopy confirmed the presence of epitaxially embedded ErAs nanoparticles at Er concentrations ≥8×1019 cm-3. The observed electrical properties are discussed in terms of the dependence of ErAs nanoparticle formation with Er doping.
- Research Organization:
- Energy Frontier Research Centers (EFRC); Center for Energy Efficient Materials (CEEM)
- Sponsoring Organization:
- USDOE SC Office of Basic Energy Sciences (SC-22)
- DOE Contract Number:
- SC0001009
- OSTI ID:
- 1064925
- Journal Information:
- J. Vac. Sci. Technol. B, Journal Name: J. Vac. Sci. Technol. B Vol. 29
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
bio-inspired
charge transport
defects
electrodes - solar
energy storage (including batteries and capacitors)
materials and chemistry by design
optics
phonons
solar (photovoltaic)
solid state lighting
synthesis (novel materials)
synthesis (scalable processing)
synthesis (self-assembly)
thermoelectric
bio-inspired
charge transport
defects
electrodes - solar
energy storage (including batteries and capacitors)
materials and chemistry by design
optics
phonons
solar (photovoltaic)
solid state lighting
synthesis (novel materials)
synthesis (scalable processing)
synthesis (self-assembly)
thermoelectric