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Electrical Properties of Er-doped In0.53Ga0.47As

Journal Article · · J. Vac. Sci. Technol. B
DOI:https://doi.org/10.1116/1.3559480· OSTI ID:1064925
The electrical properties of In0.53Ga0.47As As thin films Er-doped to concentrations of 1.5×1017 –7.2×1020 cm-3 grown by molecular beam epitaxy at 490 °C on (001) InP substrates were studied. Electrical conductivity, carrier density, and carrier mobility as a function of Er doping were measured by Hall effect at temperatures of 20–750 K. Additionally, high-angle annular dark-field scanning transmission electron microscopy and infrared absorption spectroscopy confirmed the presence of epitaxially embedded ErAs nanoparticles at Er concentrations ≥8×1019 cm-3. The observed electrical properties are discussed in terms of the dependence of ErAs nanoparticle formation with Er doping.
Research Organization:
Energy Frontier Research Centers (EFRC); Center for Energy Efficient Materials (CEEM)
Sponsoring Organization:
USDOE SC Office of Basic Energy Sciences (SC-22)
DOE Contract Number:
SC0001009
OSTI ID:
1064925
Journal Information:
J. Vac. Sci. Technol. B, Journal Name: J. Vac. Sci. Technol. B Vol. 29
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English