Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD

Journal Article · Tue Dec 01 04:00:00 EST 1992 · Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States)

DOI:https://doi.org/10.1007/BF02667602· OSTI ID:6580945

Stockman, S A; Hanson, A W; Lichtenthal, S M; Fresina, M T; Hoefler, G E; Hsieh, K C; Stillman, G E ^[1]

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1. Univ. of Illinois, Urbana (United States)

Carbon doped p-type GaAs and In[sub 0.53]Ga[sub 0.47]As epitaxial layers were grown by low-pressure metalorganic chemical vapor deposition using CCl[sub 4] as the carbon source. Low-temperature post-growth annealing resulted in a significant increase in the hole concentration for both GaAs and In[sub 0.53]Ga[sub 0.47]As, especially at high doping levels. The most heavily doped GaAs sample had a hole concentration of 3.6 [times] 10[sup 20] cm[sup [minus]3] after a 5 minute anneal at approximately 400[degree]C in N[sub 2], while the hole concentration in In[sub 0.53]Ga[sub 0.47]As reached 1.6 [times] 10[sup 19] cm[sup [minus]3] after annealing. This behavior is attributed to hydrogen passivation of carbon acceptors. Post-growth cool-down in an AsH[sub 3]/H[sub 2] ambient was found to be the most important factor affecting the degree of passivation for single, uncapped GaAs layers. No evidence of passivation is observed in the base region of InGaP/GaAs HBTs grown at approximately 625[degree]C. The effect of n-type cap layers and cool-down sequence on passivation of C-doped InGaAs grown at approximately 525[degree] shows that hydrogen can come from AsH[sub 3], PH[sub 3], or H[sub 2], and can be incorporated during growth and post-growth cool-down. In the case of InP/InGaAs HBTs, significant passivation was found to occur in the C-doped base region. 28 refs., 5 figs., 2 tabs.

• OSTI ID: 6580945
• Journal Information: Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States), Journal Name: Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States) Vol. 21:12; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CARBON
CARBON TETRACHLORIDE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CHLORINATED ALIPHATIC HYDROCARBONS
CRYSTAL DOPING
DEPOSITION
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALOGENATED ALIPHATIC HYDROCARBONS
HEAT TREATMENTS
HETEROJUNCTIONS
HYDROGEN
INDIUM COMPOUNDS
JUNCTIONS
NONMETALS
ORGANIC CHLORINE COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC HALOGEN COMPOUNDS
PASSIVATION
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING