Comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCl{sub 4}-doped InGaAs

Journal Article · Mon Aug 01 04:00:00 EDT 1994 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/BF02651375· OSTI ID:81368

Stockman, S A; Hanson, A W; Colomb, C M; Fresina, M T; Baker, J E; Stillman, G E ^[1]

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1. Univ. of Illinois, Urbana, IL (United States)

Factors which influence the alloy composition and doping level of CCl{sub 4}-doped In{sub 0.53}Ga{sub 0.47}As grown at low temperatures (450{degree}C < T{sub g} < 560{degree}C) by low-pressure metalorganic chemical vapor deposition (MOCVD) have been investigated. The composition is highly dependent on substrate temperature due to the preferential etching of In from the surface during growth and the temperature-dependent growth efficiency associated with the Ga source. The lower pyrolysis temperature of TEGa relative to TMGa allows the growth of CCl{sub 4}-doped InGaAs at lower growth temperatures than can be achieved using TMGa, and results in improved uniformity. High p-type doping (p approximately 7 x 10{sup 19} cm{sup -3}) has been achieved in C-doped InGaAs grown at T{sub g} = 450{degree}C. Secondary ion mass spectrometry analysis of a C-doping spike in InGaAs before and after annealing at approximately 670{degree}C suggests that the diffusivity of C is significantly lower than for Zn in InGaAs. The hole mobilities and electron diffusion lengths in p{sup +}-InGaAs doped with C are also found to be comparable to those for Be and Zn-doped InGaAs, although it is also found that layers which are highly passivated by hydrogen suffer a degradation in hole mobility. InP/InGaAs heterojunction bipolar transistors (HBTs) with a C-doped based exhibit high-frequency performance comparable to the best reported results for MOCVD-grown InP-based HBTs. 30 refs., 8 figs.

• Sponsoring Organization: USDOE
• DOE Contract Number: FG02-91ER45439
• OSTI ID: 81368
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 8 Vol. 23; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CARBON
CARBON TETRACHLORIDE
CHEMICAL VAPOR DEPOSITION
DIFFUSION
DOPED MATERIALS
ETCHING
GALLIUM ARSENIDES
GROWTH
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
ORGANOMETALLIC COMPOUNDS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TRANSISTORS