Effect of post-growth cooling ambient on acceptor passivation in carbon-doped GaAs grown by metalorganic chemical vapor deposition

Journal Article · Mon Mar 15 04:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108748· OSTI ID:6856458

Stockman, S A; Hanson, A W; Jackson, S L; Baker, J E; Stillman, G E ^[1]

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1. Center for Compound Semiconductor Microelectronics and Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)

The degree of unintentional hydrogen passivation of acceptors in heavily C-doped GaAs ([ital p][gt]10[sup 18] cm[sup [minus]3]) grown by metalorganic chemical vapor deposition has been found to be a strong function of post-growth cool-down ambient. The carbon concentration in the GaAs and the amount of AsH[sub 3] in the cool-down ambient are the most important factors affecting passivation. Carbon acceptors can be reactivated by annealing in N[sub 2], then repassivated by heating and re-cooling in an AsH[sub 3]/H[sub 2] or PH[sub 3]/H[sub 2] ambient. Secondary ion mass spectrometry analysis shows that the hydrogen concentration is significantly higher in a C-doped GaAs surface layer which is exposed to the cool-down ambient than in a layer which is buried beneath [ital n]-type GaAs. This result is consistent with observations in [ital n]-[ital p]-[ital n] heterojunction bipolar transistor structures, where the fraction of C acceptors passivated in the base region is found to be less than in a single layer grown under identical conditions. Be-doped GaAs grown by gas-source molecular beam epitaxy has also been heated and cooled in AsH[sub 3]-containing ambients, but no acceptor passivation is detectable by Hall effect measurements.

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 6856458
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:11; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ACTIVATION ANALYSIS
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CARBON ADDITIONS
CHEMICAL ANALYSIS
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
COOLING
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HYDROGENATION
MASS SPECTROSCOPY
MATERIALS
PASSIVATION
PHYSICAL PROPERTIES
PNICTIDES
SPECTROSCOPY
SURFACE COATING