Reduction of 1/f noise in multiplexed linear In[sub 0. 53]Ga[sub 0. 47]As detector arrays via epitaxial doping

Journal Article · Mon Feb 01 04:00:00 EST 1993 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.182505· OSTI ID:6434836

Joshi, A M; Olsen, G H; Ban, V S; Mykietyn, E; Lange, M J ^[1]; Mohr, D T ^[2]

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1. EPITAXX, Inc., Trenton, NJ (United States)
2. EG and G Princeton Applied Research, Trenton, NJ (United States)

A significant (2-5X) reduction in 1/f noise was observed in the In[sub 0.53]Ga[sub 0.47]As photodetector arrays read out by a PMOS multiplexer, when the epitaxial InP cap' layer doping was changed from undoped i.e., n-type [approximately]5 [times] 10[sup 17] cm[sup [minus]3] to sulfur-doped n type of about 3 [times] 10[sup 16] cm[sup [minus]3]. A further decrease was observed when the InP buffer' layer was also changed from undoped to sulfur-doped n type of about 5 [times] 10[sup 17] cm[sup [minus]3]. Data are also presented for the variation of 1/f noise, within a temperature range of 18 C to [minus]40 C. Surface states at the InP cap/SiN interface appear to be the primary source of 1/f noise, with the bulk states at the n[sup [minus]] In[sub 0.53]Ga[sub 0.47]As/InP buffer heterointerface being a secondary source of 1/f noise. Increased n-type doping in the high-bandgap InP cap and buffer layers may reduce electron trapping, and thus 1/f noise. The measured noise spectrum of InGaAs photodetectors varies as f[sup y] with y being approximately [minus]0.45 for device structures with doped and undoped InP cap' layers. For a doped InP buffer' layer, this value of y is [minus]0.3. The authors observed no change in exponent y for temperatures between 18 C and [minus]40 C for any device structure.

• OSTI ID: 6434836
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:2; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

440600* -- Optical Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
ARSENIC COMPOUNDS
ARSENIDES
CARBON COMPOUNDS
CARBON DIOXIDE
CARBON MONOXIDE
CARBON OXIDES
CHALCOGENIDES
CURRENTS
DATA
DESIGN
DOPED MATERIALS
EARTH ATMOSPHERE
ELECTRIC CURRENTS
ELECTRONIC EQUIPMENT
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INFORMATION
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MULTIPLEXERS
NOISE
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