Ga/sub( 1-x)/Al/sub x/As/Ga/sub( 1-y)/Al/sub y/As double-heterostructure room-temperature lasers grown by metalorganic chemical vapor deposition

Journal Article · Thu Dec 15 00:00:00 EST 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89569· OSTI ID:7282749

Dupuis, R D; Dapkus, P D

Room-temperature operation of Ga/sub( 1-x)/Al/sub x/As/Ga/sub( 1-y)/Al/sub y/As double-heterostructure lasers grown by metalorganic chemical vapor deposition (MO-CVD) has been achieved. These devices have Ga/sub( 1-y)/Al/sub y/As active layers of 0.89 or approx. =y9 or approx. =0.12 and emit in the wavelength range 8000<8300 A. Broad-area Fabry-Perot lasers with pulsed threshold current densities as low as approx.1.2 kA/cm/sup 2/ have been fabricated. These lasers are produced from five-layer epitaxial structures grown entirely by the MO-CVD process and are the first such devices to be fabricated from materials grown by a vapor-phase process.

• Research Organization: Rockwell International, Electronic Device Division, Electronic Research Center, Anaheim, California 92803
• OSTI ID: 7282749
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 31:12
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
EPITAXY
GALLIUM ARSENIDES
LAYERS
THRESHOLD ENERGY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
ENERGY
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE COATING
420300* - Engineering- Lasers- (-1989)