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Low-threshold room-temperature embedded heterostructure lasers

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.89081· OSTI ID:7268995
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Room-temperature embedded double-heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm/sup 2/ have been achieved in lasers grown through stripe windows opened in epitaxial GaAlAs masks. (AIP)
Research Organization:
California Institute of Technology, Pasadena, California 91125
OSTI ID:
7268995
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 29:6; ISSN APPLA
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
ENERGY
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
THRESHOLD ENERGY