Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition

Journal Article · Mon Feb 16 00:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98185· OSTI ID:6945748

Dupuis, R D; van der Ziel, J P; Logan, R A; Brown, J M; Pinzone, C J

We have fabricated low-threshold, high-quantum-efficiency, room-temperature AlGaAs-GaAs double-heterojunction injection lasers from epitaxial structures grown by metalorganic chemical vapor deposition directly on Si substrates. These devices have broad-area (125 ..mu..m x 250 ..mu..m) pulsed threshold current densities as low as J/sub th/ = 3.5 kA/cm/sup 2/ at --23 /sup 0/C. Ridge-waveguide stripe-geometry lasers (5 ..mu..m x 250 ..mu..m) have pulsed threshold currents as low as 130 mA at --23 /sup 0/C. These stripe-geometry lasers have total external differential quantum efficiencies as high as eta/sub ext/ --70%, a value equal to the eta/sub ext/ measured for similar double-heterostructure lasers grown on GaAs substrates. These are the lowest threshold currents and highest external quantum efficiencies yet reported for lasers grown on Si substrates.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974-2070
• OSTI ID: 6945748
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 50:7
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
PERFORMANCE
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
HETEROJUNCTIONS
QUANTUM EFFICIENCY
SILICON
THRESHOLD CURRENT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
GALLIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SURFACE COATING
420300* - Engineering- Lasers- (-1989)