Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates

Journal Article · Mon Feb 23 00:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98266· OSTI ID:6945778

van der Ziel, J P; Dupuis, R D; Logan, R A; Mikulyak, R M; Pinzone, C J; Savage, A

Using graded refractive index, single quantum well GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates, we have obtained injection lasers with broad area pulsed thresholds of 3.5 kA/cm/sup 2/ at 300 K. With the current flow restricted to 5-..mu..m-wide stripes, pulsed thresholds of 130 mA and differential quantum efficiencies of 70% were obtained at 300 K. Pulsed oscillation has been obtained up to 375 K and continuous oscillation up to 160 K. The rapid degradation of the lasers suggests the growth of nonradiative regions in the active layer.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6945778
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 50:8
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
QUANTUM EFFICIENCY
THRESHOLD CURRENT
CHEMICAL VAPOR DEPOSITION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
HETEROJUNCTIONS
MEDIUM TEMPERATURE
OSCILLATIONS
SILICON
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
GALLIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SURFACE COATING
420300* - Engineering- Lasers- (-1989)