Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates

Journal Article · Sun Feb 22 23:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98266· OSTI ID:6945778

van der Ziel, J P; Dupuis, R D; Logan, R A; Mikulyak, R M; Pinzone, C J; Savage, A

Using graded refractive index, single quantum well GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates, we have obtained injection lasers with broad area pulsed thresholds of 3.5 kA/cm/sup 2/ at 300 K. With the current flow restricted to 5-..mu..m-wide stripes, pulsed thresholds of 130 mA and differential quantum efficiencies of 70% were obtained at 300 K. Pulsed oscillation has been obtained up to 375 K and continuous oscillation up to 160 K. The rapid degradation of the lasers suggests the growth of nonradiative regions in the active layer.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6945778
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
MEDIUM TEMPERATURE
NUMERICAL DATA
OSCILLATIONS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SURFACE COATING
THRESHOLD CURRENT