Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates

Journal Article · Mon Jul 13 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98997· OSTI ID:6415424

van der Ziel, J P; Dupuis, R D; Logan, R A; Pinzone, C J

Using pulsed current excitation we have studied the rapid degradation of the laser properties of low-threshold-graded refractive-index single quantum well GaAs lasers grown by metalorganic vapor deposition on Si substrates. The degradation results from the growth of nonradiative regions in the active layer, resulting in rapid increase in threshold with time. The stimulated emission is quenched --1--5 ..mu..s after the start of the current pulse preventing continuous operation at 300 K. The degradation process is similar to that observed in similar lasers grown on GaAs substrates and occurs very rapidly due to the presence of a high density of defects and thermally induced strain.

• Research Organization: AT and T Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6415424
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
EMISSION
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
OPERATION
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
PHYSICAL PROPERTIES
PNICTIDES
QUENCHING
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
STRAINS
SURFACE COATING
VAPOR DEPOSITED COATINGS