Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

Journal Article · Mon Jan 20 00:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96796· OSTI ID:6124379

Ishikawa, M; Ohba, Y; Sugawara, H; Yamamoto, M; Nakanisi, T

Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

• Research Organization: Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho Saiwai-ku, Kawasaki 210, Japan
• OSTI ID: 6124379
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 48:3
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
OPERATION
ALUMINIUM PHOSPHIDES
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
EXPERIMENTAL DATA
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
MEDIUM TEMPERATURE
METHYL RADICALS
ORGANOMETALLIC COMPOUNDS
THRESHOLD CURRENT
VISIBLE RADIATION
ALKYL RADICALS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
ORGANIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
RADICALS
SEMICONDUCTOR DEVICES
SURFACE COATING
420300* - Engineering- Lasers- (-1989)