Highly reliable InGaP/InGaAlP visible light emitting inner stripe lasers with 667 nm lasing wavelength

Journal Article · Thu Jun 01 04:00:00 EDT 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.29283· OSTI ID:5774385

Okuda, H; Ishikawa, M; Shiozawa, H; Watanabe, Y; Itaya, K; Nitta, K; Hatakoshi, G; Kokubun, Y; Uematsu, Y

In order to obtain highly reliable InGaP/InGaAlP inner stripe (IS) lasers, the authors have clarified the relation between the maximum CW operation temperature and other laser characteristics, such as the pulsed threshold current, characteristic temperature, series resistance, and thermal resistance. The Al composition of the cladding layer, the carrier concentration of the p-cladding layer, and the thicknesses of the active layer and cladding layer have been optimized. It was found that an Al composition of 0.7 was the most suitable for the cladding layer, and the optimized carrier concentration was 4 x 10/sup 17/ cm/sup -3/. A maximum temperature of 90/sup 0/C was obtained for a 0.1 /mu/m active layer thickness and a 0.6 /mu/m cladding layer thickness. This is the highest value for InGaP/InGaAlP IS lasers, to our knowledge. In the case of a 0.06 /mu/m active layer thickness and a 0.8 /mu/m cladding layer thickness, a maximum temperature of 75/sup 0/C was obtained. IS lasers with facet coating have been stably operating for more than 8000 h at 40/sup 0/C and 3 mW and for more than 4000 h at 50/sup 0/C and 3 mW.

• Research Organization: Toshiba Corp., Kawasaki, Kanagawa (Japan). Research and Development Center
• OSTI ID: 5774385
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 25:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
CARRIER DENSITY
CLADDING
DEPOSITION
DIMENSIONS
EMISSION
ENERGY-LEVEL TRANSITIONS
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
OPTIMIZATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RELIABILITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION
SURFACE COATING
THICKNESS
WAVELENGTHS