Temperature dependence of the threshold current for InGaAlP visible laser diodes

Journal Article · Tue Jan 01 04:00:00 EST 1991 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/3.73537· OSTI ID:5883280

Ishikawa, M; Shiozawa, H; Itaya, K; Hatakoshi, G; Uematsu, Y ^[1]

---

1. Research and Development Center, Toshiba Corp., Saiwai-ku, Kawasaki 210 (JP)

The temperature dependence of the threshold current for InGaAlP visible light laser diodes is investigated from the aspect of gain-current characteristics. The cavity length dependence of light output power versus current characteristic was evaluated for a 40 {mu}m width InGaP-InBaAlP broad-stripe laser in the temperature range between {minus} 70 and 90{degrees} C, which had about a 670 nm oscillation wavelength at room temperature. The threshold-current density dependence on the cavity length shows that a linear-gain approximation is suitable for this system. A minimum threshold-current density at 860 A/cm{sup 2} was achieved at room temperature with a cavity length of 1160 {mu}m, which is the lowest value ever reported for this material. The linear-gain parameters {beta} and {ital J}{sub 0} depended on the temperature with the characteristic temperature of about 200 K, which is considered to be the intrinsic characteristic temperature of the threshold current for this active-layer material. The internal quantum efficiency, derived from the cavity length dependence of the differential quantum efficiency, decreased in the temperature range higher than {minus}10{degrees} C, which affected the excess threshold-current increase and the decrease in the characteristic temperature at this temperature range. The theoretical calculation, considering a one-dimensional band structure model, showed that this excess increase of the threshold current was found to be attributed to the electron overflow current into the p-type cladding layer.

• OSTI ID: 5883280
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA) Vol. 27:1; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM COMPOUNDS
AMPLIFICATION
CURRENTS
DIMENSIONS
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ENERGY
GAIN
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASER CAVITIES
LASERS
LENGTH
LOW TEMPERATURE
MATERIALS
MEDIUM TEMPERATURE
ONE-DIMENSIONAL CALCULATIONS
P-TYPE CONDUCTORS
PHOSPHORUS COMPOUNDS
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SOLID STATE LASERS
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY
VISIBLE RADIATION