Fabrication and lasing characteristics of 0. 67. mu. m GaInAsP/AlGaAs visible lasers prepared by liquid phase epitaxy on (100) GaAs substrates

Journal Article · Sun Feb 01 04:00:00 EST 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073313· OSTI ID:6769906

Kishimo, K; Harada, A; Kaneko, Y

GaInAsP/AlGaAs lasers emitting at 0.67 ..mu..m in wavelength were fabricated on n-type (100) GaAs substrates by liquid phase epitaxy. The laser had a GaInAsP active layer clad by wide-gap Al/sub 0.7/Ga/sub 0.3/As layers. The fabrication conditions and lasing characteristics were discussed in detail at the first time. In order to obtain a low threshold laser wafer, it was required that the GaInAsP active layer be grown at 790/sup 0/C matching the lattice parameter with AlGaAs cladding layers, as well as adjusting the acceptor concentration in the AlGaAs cladding layer to be optimum. The mean threshold current density, J/sub th/ under the room-temperature pulsed operation was 5.6 kA/cm/sup 2/ for the active layer 0.26 ..mu..m thick. From theoretical and experimental dependence of the J/sub th/ on the active layer thickness d, minimum J/sub th/ of 1.9 kA/cm/sup 2/ was expected at d = 0.05 ..mu..m. The maximum light emission power and differential quantum efficiency was 30 mW/facet and 46 percent, respectively, for the 8 ..mu..m oxide stripe laser. The temperature characteristics of threshold and lasing wavelength were observed.

• Research Organization: Dept. of Electrical and Electronics Engineering, Sophia Univ., Kioi-cho, Chiyoda, Tokyo 102
• OSTI ID: 6769906
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:2; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMBIENT TEMPERATURE
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CURRENT DENSITY
CURRENTS
DIMENSIONS
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER RADIATION
LASERS
LATTICE PARAMETERS
LAYERS
LIQUID PHASE EPITAXY
MATERIALS
N-TYPE CONDUCTORS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
PULSES
QUANTITY RATIO
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SUBSTRATES
THERMODYNAMIC PROPERTIES
THICKNESS
THRESHOLD CURRENT
VERY HIGH TEMPERATURE
WAVELENGTHS