Application of damage constants in gamma irradiated amphoterically Si doped GaAs LEDs

Conference · Thu Jan 01 04:00:00 EST 1976

OSTI ID:7267148

Barnes, C E; Soda, K J

The effect of gamma irradiation on the electrical and optical properties of amphoterically Si-doped GaAs LEDs has been investigated. The lifetime-damage constant product, tau/sub 0/K/sub ..gamma../, for degradation of the light output at constant low voltage was found to be 7.5 x 10/sup -7/ Rads/sup -1/. However, because of the presence of space charge limited current (SCLC) flow at higher currents, which conform to the practical operating range of 10 to 50 mA, the light output degraded more rapidly than at lower voltages. It is shown that the same value of tau/sub 0/K/sub ..gamma../ can be used to predict the degradation at practical operating currents when the SCLC is taken into account. Consequently, the practical implications of the results are that care must be taken in predicting degradation with a low voltage tau/sub 0/K/sub ..gamma../, and that the doping conditions leading to the presence of the SCLC should be avoided for LEDs that must operate in a radiation environment.

• Research Organization: Sandia Labs., Albuquerque, N.Mex. (USA); Air Force Weapons Lab., Kirtland AFB, N.Mex. (USA)
• DOE Contract Number: AT(29-1)-789
• OSTI ID: 7267148
• Report Number(s): SAND-76-5151; CONF-760728-2
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAMMA RADIATION
IONIZING RADIATIONS
LIGHT EMITTING DIODES
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON