Application of damage constants in gamma irradiated amphoterically Si doped GaAs LEDs
- Sandia Labs., Albuquerque, NM
The effect of gamma irradiation on the electrical and optical properties of amphoterically Si-doped GaAs LEDs has been investigated. The lifetime-damage constant product, tau/sub o/K/sub ..gamma../, for degradation of the light output at constant low voltage was found to be 7.5 x 10/sup -7/ Rads/sup -1/. However, because of the presence of space charge limited current (SCLC) flow at higher currents, which conform to the practical operating range of 10 to 50 mA, the light output degraded more rapidly than at lower voltages. It is shown that the same value of tau/sub o/K/sub ..gamma../ can be used to predict the degradation at practical operating currents when the SCLC is taken into account. Consequently, the practical implications of the results are that care must be taken in predicting degradation with a low voltage tau/sub o/K/sub ..gamma../, and that the doping condiions leading to the presence of the SCLC should be avoided for LEDs that must operate in a radiation environment.
- OSTI ID:
- 7213072
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Vol. NS-23:6; Conference: IEEE annual conference on nuclear and space radiation effects, San Diego, CA, USA, 27 Jul 1976
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of gamma irradiation on the low temperature properties of amphoterically si-doped GaAs LED's
Development of efficient, radiation-insensitive GaAs:Zn LEDs
Related Subjects
LIGHT EMITTING DIODES
PHYSICAL RADIATION EFFECTS
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GAMMA RADIATION
OPTICAL PROPERTIES
SILICON ADDITIONS
SPACE CHARGE
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
IONIZING RADIATIONS
PHYSICAL PROPERTIES
PNICTIDES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON ALLOYS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems