Effect of gamma irradiation on the low temperature properties of amphoterically si-doped GaAs LED's

Journal Article · Thu Dec 01 04:00:00 EST 1977 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2133191· OSTI ID:7090725

Barnes, C E

The effects of gamma irradiation on the light intensity, total current, spectral characteristics, and radiative decay time as a function of applied voltage at 76/sup 0/K have been studied in amphoterically Si-doped GaAs light-emitting diodes (LED's). At low voltages, both the total current, I, and radiative current are due to space charge recombination with the result that, at constant voltage, I increases with gamma dose, Phi, while the light intensity, L, remains constant. At higher voltages, where the radiative current is due to recombination in the neutral p-region, L decreases sharply with Phi at constant voltage. This rapid decrease is due, in part, to the presence of space-charge limited current (SCLC) flow which also leads to a decrease in I with Phi at constant high voltage. Spectral measurements show that the emission peak energy is proportional to junction voltage at low currents suggesting radiative tunneling of carriers in deep tail states. In accordance with the ''wavy band'' model for these diodes, tail states are also responsible for the observed inverse dependence of radiative decay time on diode current and emitted photon energy. The long lifetimes in the localized deep tail states lead to a radiation damage effect contrary to that observed for diffusion length-associated life-times; that is, the longest lifetimes are least affected by gamma irradiation.

• Research Organization: Sandia Labs., Albuquerque, NM
• OSTI ID: 7090725
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 124:12; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EMISSION SPECTRA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAMMA RADIATION
IONIZING RADIATIONS
LIFETIME
LIGHT EMITTING DIODES
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPACE CHARGE
SPECTRA