Development of efficient, radiation-insensitive GaAs:Zn LEDs
Although amphoterically Si doped GaAs LEDs are commercially popular because of their high light output, they are extremely sensitive to irradiation. Therefore, it would be desirable to have a viable alternative available for radiation environment applications. In this work it is shown that by increasing the hole concentration in the active region of nonamphoterically doped GaAs LEDs, one can simultaneously achieve high light output and low radiation sensitivity. Experimental results indicate that the minority carrier lifetime is smaller in more heavily doped devices so that the lifetime-damage constant, tau/sub 0/K, is also smaller. Hence, the heavily doped devices should have greater radiation hardness. Neutron-induced light output degradation data as a function of hole concentration confirm this conclusion.
- Research Organization:
- Sandia Labs, Albuquerque, NM
- OSTI ID:
- 6545729
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-24:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Development of efficient, radiation-insensitive GaAs:Zn LEDs
Radiation effects in optical emitters and receivers
Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
HARDENING
LIGHT EMITTING DIODES
PERFORMANCE
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES