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Radiation response of MOS capacitors containing fluorinated oxides

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7256775
; ;

By introducing small amounts of fluorine into the gate oxide, the authors have been able to significantly alter the radiation response of Metal/SiO/sub 2//Si (MOS) capacitors, and their subsequent time dependent behavior. Experimentally they observed that compared with their control capacitors, which have no fluorine introduced into the oxide, the fluorinated samples exhibit the following major differences: (1) the densities of radiation-induced oxide charge and interface traps are drastically reduced, (2) the gate-size dependence of the radiation-induced interface traps is greatly suppressed, and (3) the overall density of the radiation-induced interface traps continues to decrease with time for many hours after irradiation before a turn-around trend is observed. Possible mechanisms involving the roles that fluorine may play in relieving the oxide strain near the SiO/sub 2//Si interface and in the post-irradiation defect-reaction chemistry are discussed.

Research Organization:
Yale Univ., Center for Microelectronic Materials and Structures, and Dept. of Electrical Engineering, New Haven, CT (US)
OSTI ID:
7256775
Report Number(s):
CONF-8707112-
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
Country of Publication:
United States
Language:
English

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Related Subjects

25 ENERGY STORAGE
250400 -- Energy Storage-- Capacitor Banks
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITORS
CHALCOGENIDES
CHEMICAL REACTIONS
CHEMISTRY
ELECTRICAL EQUIPMENT
EQUIPMENT
EQUIPMENT INTERFACES
FLUORINATION
HALOGENATION
INSTABILITY
IRRADIATION
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
PLASMA INSTABILITY
PLASMA MACROINSTABILITIES
RADIATION CHEMISTRY
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TIME DEPENDENCE
TRANSISTORS
TRAPPED-PARTICLE INSTABILITY