Radiation effects on fluorinated field oxides and associated devices

Conference · Sat Dec 01 04:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5937774

Nishioka, Y; Itoga, T; Ohyu, K; Kato, M ^[1]; Ma, T P ^[2]

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1. Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.
2. Yale Univ., Dept. of Electrical Engineering, New Haven, CT (US)

Fluorine has been introduced into the LOCOS field oxide by high-energy (2 MeV) F implantation and subsequent annealing at 950{degrees} C for 60 min. Improved radiation hardness of the field oxide and its associated device parameters has been observed. N-channel MOSFETs isolated by the fluorinated oxide exhibit a lower radiation-induced source-drain leakage current. This is attributed to the smaller density of radiation-induced positive oxide charge in the fluorinated field oxide compared to its control This is consistent with the experimental results that threshold voltage shifts of the field-oxide FETs are smaller than their control. In addition, the radiation-induced leakage currents of reverse biased n{sup +}p-junction diodes fabricated with the F implantation process are suppressed, suggesting that the generation of interface traps at the gate SiO{sub 2}/Si and the field SiO{sub 2}/Si interfaces is also reduced in the fluorinated devices.

• OSTI ID: 5937774
• Report Number(s): CONF-900723--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Journal Volume: 37:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CHALCOGENIDES
CHEMICAL REACTIONS
CURRENTS
ELECTRIC CURRENTS
ELEMENTS
ENERGY RANGE
FIELD EFFECT TRANSISTORS
FLUORINATION
HALOGENATION
HARDENING
HEAT TREATMENTS
HIGH TEMPERATURE
JUNCTIONS
LEAKAGE CURRENT
MEV RANGE
MEV RANGE 01-10
MINERALS
MOS TRANSISTORS
MOSFET
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
P-N JUNCTIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
TRAPPING